Show Hamamatsu Avalanche Photo Diode 1908020868
This is all the information about APD 1908020868. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1908020868 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F02 |
Break-through voltage: |
400 V |
Voltage for Gain 100 (T=+25°C): |
372.6 V |
Dark current: |
11.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
246 |
Position in Box: |
1 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10280 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 373.7556234 V T = -25 °C: 338.813718 V |
Voltage for Gain 150: |
T = +20 °C: 381.5963913 V T = -25 °C: 346.0870617 V |
Voltage for Gain 200: |
T = +20 °C: 385.956261 V T = -25 °C: 350.1765539 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.708487997 V-1 T = -25 °C: 5.096836491 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.324451519 V-1 T = -25 °C: 9.705117913 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.56142142 V-1 T = -25 °C: 15.09756232 V-1 |
Break-through voltage: |
T = +20 °C: 400.0468207 V T = -25 °C: 364.1593481 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history