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Show Hamamatsu Avalanche Photo Diode 1904020567 - Archived data from Tue, 11. August 2020 18:08:40 CEST


This is all the information about APD 1904020567. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1904020567
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B06
Break-through voltage: 403 V
Voltage for Gain 100 (T=+25°C): 376.4 V
Dark current: 27.7 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 29
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 376.2201776 V     T = -25 °C: 340.9744448 V
Voltage for Gain 150: T = +20 °C: 383.9861864 V     T = -25 °C: 346.2286847 V
Voltage for Gain 200: T = +20 °C: 388.3080944 V     T = -25 °C: 351.0249585 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.577453708 V-1     T = -25 °C: 5.008197671 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.068021061 V-1     T = -25 °C: 10.05461097 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.11830788 V-1     T = -25 °C: 25.61244346 V-1
Break-through voltage: T = +20 °C: 398.12493 V     T = -25 °C: 366.5353234 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:24 CET jreher Updated box and position via API.
11. Aug 2020 18:08:40 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:01 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:48:51 CEST Tobias Imported from Hamamatsu datasheet.