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Show Hamamatsu Avalanche Photo Diode 1903020466 - Archived data from Tue, 11. August 2020 18:08:38 CEST


This is all the information about APD 1903020466. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1903020466
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C10
Break-through voltage: 408 V
Voltage for Gain 100 (T=+25°C): 379.3 V
Dark current: 20.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 19
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 380.2247182 V     T = -25 °C: 343.9362135 V
Voltage for Gain 150: T = +20 °C: 388.0199394 V     T = -25 °C: 348.0904072 V
Voltage for Gain 200: T = +20 °C: 393.027923 V     T = -25 °C: 353.1599602 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.576051558 V-1     T = -25 °C: 24.64758756 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.065727041 V-1     T = -25 °C: 15.46042348 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.27070322 V-1     T = -25 °C: 21.6204214 V-1
Break-through voltage: T = +20 °C: 406.8998402 V     T = -25 °C: 370.7677837 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:22 CET jreher Updated box and position via API.
11. Aug 2020 18:08:38 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:00 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:48:49 CEST Tobias Imported from Hamamatsu datasheet.