Show Hamamatsu Avalanche Photo Diode 1804020293
This is all the information about APD 1804020293. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1804020293 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A08 |
Break-through voltage: |
426 V |
Voltage for Gain 100 (T=+25°C): |
398.3 V |
Dark current: |
5.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
330 |
Position in Box: |
10 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10481 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 398.3551312 V T = -25 °C: 361.5919701 V |
Voltage for Gain 150: |
T = +20 °C: 406.2629723 V T = -25 °C: 369.3986283 V |
Voltage for Gain 200: |
T = +20 °C: 410.6446699 V T = -25 °C: 373.7480686 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.445346522 V-1 T = -25 °C: 4.447523803 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.687358381 V-1 T = -25 °C: 8.615225475 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.08778964 V-1 T = -25 °C: 14.909596 V-1 |
Break-through voltage: |
T = +20 °C: 425.7292357 V T = -25 °C: 389.3447098 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history