Show Hamamatsu Avalanche Photo Diode 1803020199
This is all the information about APD 1803020199. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1803020199 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C13 |
Break-through voltage: |
430 V |
Voltage for Gain 100 (T=+25°C): |
401.1 V |
Dark current: |
4.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
187 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10141 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 401.0997684 V T = -25 °C: 364.486761 V |
Voltage for Gain 150: |
T = +20 °C: 409.0685599 V T = -25 °C: 372.3420554 V |
Voltage for Gain 200: |
T = +20 °C: 413.4965857 V T = -25 °C: 376.7225085 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.497670263 V-1 T = -25 °C: 4.433960222 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.75600998 V-1 T = -25 °C: 8.628421017 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21492449 V-1 T = -25 °C: 14.8725324 V-1 |
Break-through voltage: |
T = +20 °C: 429.2968189 V T = -25 °C: 392.9564339 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history