Show Hamamatsu Avalanche Photo Diode 1802020129
This is all the information about APD 1802020129. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1802020129 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
429 V |
| Voltage for Gain 100 (T=+25°C): |
400.7 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
46 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10075 |
| |
|
| Shipment: |
|
| Grid number: |
559 |
| Position in grid: |
13 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
15. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
18. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
4 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
18. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 401.474143 V T = -25 °C: 364.8108921 V |
| Voltage for Gain 150: |
T = +20 °C: 409.4391865 V T = -25 °C: 372.5878707 V |
| Voltage for Gain 200: |
T = +20 °C: 413.7819998 V T = -25 °C: 376.9756157 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.374269059 V-1 T = -25 °C: 4.833416949 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.440127129 V-1 T = -25 °C: 8.939993497 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.2331575 V-1 T = -25 °C: 13.95031522 V-1 |
| Break-through voltage: |
T = +20 °C: 429.5600426 V T = -25 °C: 393.0627202 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
