Show Hamamatsu Avalanche Photo Diode 1802020128
This is all the information about APD 1802020128. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1802020128 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A09 |
Break-through voltage: |
427 V |
Voltage for Gain 100 (T=+25°C): |
399.6 V |
Dark current: |
6.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
46 |
Position in Box: |
10 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10075 |
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Shipment: |
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Grid number: |
559 |
Position in grid: |
12 |
Arrival for irradiation: |
11. Aug 2016 |
Sent for analysis after irradiation: |
02. Sep 2016 |
Return for assembly: |
15. Nov 2016 |
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Irradiation: |
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Date: |
18. Aug 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
4 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
18. Aug 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 399.6406898 V T = -25 °C: 362.6990331 V |
Voltage for Gain 150: |
T = +20 °C: 407.5220384 V T = -25 °C: 370.4892996 V |
Voltage for Gain 200: |
T = +20 °C: 411.9042352 V T = -25 °C: 374.8084879 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.877571115 V-1 T = -25 °C: 4.697338731 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.880961376 V-1 T = -25 °C: 9.425697718 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96672187 V-1 T = -25 °C: 13.83783263 V-1 |
Break-through voltage: |
T = +20 °C: 426.5098996 V T = -25 °C: 389.8277817 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history