Show Hamamatsu Avalanche Photo Diode 1802020110
This is all the information about APD 1802020110. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1802020110 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
397.3 V |
| Dark current: |
6.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
189 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10144 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.8215998 V T = -25 °C: 361.2378385 V |
| Voltage for Gain 150: |
T = +20 °C: 405.7646762 V T = -25 °C: 369.0186751 V |
| Voltage for Gain 200: |
T = +20 °C: 410.1743952 V T = -25 °C: 373.3802648 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.586009967 V-1 T = -25 °C: 4.562641816 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.021403739 V-1 T = -25 °C: 8.971936408 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97691957 V-1 T = -25 °C: 15.70433854 V-1 |
| Break-through voltage: |
T = +20 °C: 426.2531562 V T = -25 °C: 389.5477124 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
