Show Hamamatsu Avalanche Photo Diode 1802020107
This is all the information about APD 1802020107. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1802020107 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F06 |
Break-through voltage: |
425 V |
Voltage for Gain 100 (T=+25°C): |
396.2 V |
Dark current: |
4.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
189 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10144 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.7429 V T = -25 °C: 360.0352637 V |
Voltage for Gain 150: |
T = +20 °C: 404.6581562 V T = -25 °C: 367.8237936 V |
Voltage for Gain 200: |
T = +20 °C: 409.0438837 V T = -25 °C: 372.1851919 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.609957601 V-1 T = -25 °C: 4.600337797 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.06962391 V-1 T = -25 °C: 9.024009238 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.04201538 V-1 T = -25 °C: 13.92368017 V-1 |
Break-through voltage: |
T = +20 °C: 424.892277 V T = -25 °C: 388.1310341 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history