Show Hamamatsu Avalanche Photo Diode 1801020040
This is all the information about APD 1801020040. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1801020040 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.5 V |
| Dark current: |
5.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
241 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10497 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 1.042781397 V T = -25 °C: 348.9780061 V |
| Voltage for Gain 150: |
T = +20 °C: 1.042781397 V T = -25 °C: 356.6534135 V |
| Voltage for Gain 200: |
T = +20 °C: 1.042781397 V T = -25 °C: 360.9551704 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: -609.0583778 V-1 T = -25 °C: 4.75420427 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: -609.0583778 V-1 T = -25 °C: 9.490997078 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: -609.0583778 V-1 T = -25 °C: 14.76343231 V-1 |
| Break-through voltage: |
T = +20 °C: 411.9817722 V T = -25 °C: 375.8550419 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
