Show Hamamatsu Avalanche Photo Diode 1720019949
This is all the information about APD 1720019949. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1720019949 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
398.9 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
400 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 399.3130312 V T = -25 °C: 362.4819806 V |
| Voltage for Gain 150: |
T = +20 °C: 407.2703592 V T = -25 °C: 370.3063999 V |
| Voltage for Gain 200: |
T = +20 °C: 411.6737526 V T = -25 °C: 374.6942846 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.408739486 V-1 T = -25 °C: 4.547941015 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.604934746 V-1 T = -25 °C: 8.736616559 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.92154218 V-1 T = -25 °C: 14.72848402 V-1 |
| Break-through voltage: |
T = +20 °C: 426.771481 V T = -25 °C: 390.502387 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
