Show Hamamatsu Avalanche Photo Diode 1720019931
This is all the information about APD 1720019931. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1720019931 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
399.2 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
275 |
| Position in Box: |
37 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10495 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 400.1688302 V T = -25 °C: 363.5730026 V |
| Voltage for Gain 150: |
T = +20 °C: 408.1896704 V T = -25 °C: 371.3656949 V |
| Voltage for Gain 200: |
T = +20 °C: 412.596215 V T = -25 °C: 375.8313849 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.648176301 V-1 T = -25 °C: 4.869858711 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.641856857 V-1 T = -25 °C: 9.036117098 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.60213313 V-1 T = -25 °C: 14.50941638 V-1 |
| Break-through voltage: |
T = +20 °C: 428.0660097 V T = -25 °C: 390.6992011 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
