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Show Hamamatsu Avalanche Photo Diode 1719019862


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Subdetector specification:  
Serial: 1719019862
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D15
Break-through voltage: 426 V
Voltage for Gain 100 (T=+25°C): 398.5 V
Dark current: 5.1 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 334
Position in Box: 1
EP1 batch: none
EP1 batch after irradiation: 10503
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 398.2893679 V     T = -25 °C: 361.8701282 V
Voltage for Gain 150: T = +20 °C: 406.2943145 V     T = -25 °C: 369.6351281 V
Voltage for Gain 200: T = +20 °C: 410.7311248 V     T = -25 °C: 373.9683096 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.452596558 V-1     T = -25 °C: 4.706994937 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.582418094 V-1     T = -25 °C: 9.364490052 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.86707209 V-1     T = -25 °C: 14.80658668 V-1
Break-through voltage: T = +20 °C: 426.1037568 V     T = -25 °C: 389.3818423 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:58:24 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:31:03 CET jreher Updated box and position via API.
07. Oct 2020 15:45:25 CEST jreher Updated APD location via API.
11. Aug 2020 17:53:30 CEST jreher Updated APD location via API.
21. Jul 2020 16:17:44 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:47:33 CEST Tobias Imported from Hamamatsu datasheet.