Show Hamamatsu Avalanche Photo Diode 1719019850
This is all the information about APD 1719019850. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1719019850 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.7 V |
Dark current: |
4.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
39 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10503 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.0169852 V T = -25 °C: 359.6538849 V |
Voltage for Gain 150: |
T = +20 °C: 403.9378499 V T = -25 °C: 367.3854104 V |
Voltage for Gain 200: |
T = +20 °C: 408.3332795 V T = -25 °C: 371.6705963 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.494487274 V-1 T = -25 °C: 4.716140535 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.895416618 V-1 T = -25 °C: 8.613699685 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85358194 V-1 T = -25 °C: 14.96142493 V-1 |
Break-through voltage: |
T = +20 °C: 423.8918361 V T = -25 °C: 387.2711879 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history