Show Hamamatsu Avalanche Photo Diode 1716019591
This is all the information about APD 1716019591. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1716019591 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1416016317/1716019591 |
Unit: |
#3321 (barcode 1309035496) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
F04 |
Break-through voltage: |
421 V |
Voltage for Gain 100 (T=+25°C): |
392.2 V |
Dark current: |
3.4 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
276 |
Position in Box: |
36 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10316 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 393.2969928 V T = -25 °C: 357.1726957 V |
Voltage for Gain 150: |
T = +20 °C: 401.2311266 V T = -25 °C: 364.8503213 V |
Voltage for Gain 200: |
T = +20 °C: 405.6411712 V T = -25 °C: 369.1651494 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.444007663 V-1 T = -25 °C: 4.648235584 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.642646223 V-1 T = -25 °C: 9.266374006 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.94750759 V-1 T = -25 °C: 14.3698766 V-1 |
Break-through voltage: |
T = +20 °C: 418.3982261 V T = -25 °C: 384.5185286 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history