Show Hamamatsu Avalanche Photo Diode 1712019325
This is all the information about APD 1712019325. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1712019325 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.3 V |
| Dark current: |
3.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
260 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10305 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.1140406 V T = -25 °C: 357.5189492 V |
| Voltage for Gain 150: |
T = +20 °C: 402.0645178 V T = -25 °C: 365.2205717 V |
| Voltage for Gain 200: |
T = +20 °C: 406.4793335 V T = -25 °C: 369.5464278 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.49816332 V-1 T = -25 °C: 4.537185341 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.772566238 V-1 T = -25 °C: 8.853174401 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.2399665 V-1 T = -25 °C: 15.36120326 V-1 |
| Break-through voltage: |
T = +20 °C: 422.1262333 V T = -25 °C: 385.7064001 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
