Show Hamamatsu Avalanche Photo Diode 1712019316
This is all the information about APD 1712019316. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1712019316 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1712019316/1708018981 |
Unit: |
#3430 (barcode 1309036431) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
C09 |
Break-through voltage: |
421 V |
Voltage for Gain 100 (T=+25°C): |
392.2 V |
Dark current: |
3.4 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
268 |
Position in Box: |
19 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10309 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 393.3727834 V T = -25 °C: 356.6816665 V |
Voltage for Gain 150: |
T = +20 °C: 401.2410553 V T = -25 °C: 364.3636894 V |
Voltage for Gain 200: |
T = +20 °C: 405.6101726 V T = -25 °C: 368.6810601 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.467117706 V-1 T = -25 °C: 4.526719495 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.755974341 V-1 T = -25 °C: 8.798230927 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.36366492 V-1 T = -25 °C: 15.39071716 V-1 |
Break-through voltage: |
T = +20 °C: 420.9640741 V T = -25 °C: 384.4832328 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history