Show Hamamatsu Avalanche Photo Diode 1710019157
This is all the information about APD 1710019157. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1710019157 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
397.2 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
46 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10075 |
| |
|
| Shipment: |
|
| Grid number: |
3003 |
| Position in grid: |
0 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
13. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
18. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
18. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.7618902 V T = -25 °C: 360.9419262 V |
| Voltage for Gain 150: |
T = +20 °C: 405.7648837 V T = -25 °C: 368.7591363 V |
| Voltage for Gain 200: |
T = +20 °C: 410.1866704 V T = -25 °C: 373.1318504 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.521432247 V-1 T = -25 °C: 4.639790809 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.942589932 V-1 T = -25 °C: 9.242879872 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.32477039 V-1 T = -25 °C: 14.3080907 V-1 |
| Break-through voltage: |
T = +20 °C: 426.2116467 V T = -25 °C: 389.3317839 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
