Show Hamamatsu Avalanche Photo Diode 1706018859
This is all the information about APD 1706018859. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1706018859 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1706018859/1601016796 |
| Unit: |
#3756 (barcode 1309039371) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.5 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
256 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10302 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.9323836 V T = -25 °C: 354.6519519 V |
| Voltage for Gain 150: |
T = +20 °C: 398.8722893 V T = -25 °C: 362.2517283 V |
| Voltage for Gain 200: |
T = +20 °C: 403.2911884 V T = -25 °C: 366.5303206 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.540729851 V-1 T = -25 °C: 4.889693431 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.944313331 V-1 T = -25 °C: 8.944062306 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.80805157 V-1 T = -25 °C: 15.52292435 V-1 |
| Break-through voltage: |
T = +20 °C: 417.9423204 V T = -25 °C: 381.7981313 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history