Show Hamamatsu Avalanche Photo Diode 1705018779 - Archived data from Thu, 23. June 2016 11:42:19 CEST
This is all the information about APD 1705018779. If it is wrong, edit the data.
| Subdetector specification: | |
|---|---|
| Serial: | 1705018779 |
| Type: | Hamamatsu Avalanche Photo Diode |
| Detector: | unassigned |
| Unit: | unassigned |
| Preamp: | 0 |
| Current location: | unknown |
| Installation information: | |
| Label: | none |
| Manufacturer information: | |
| Wafer position: | B07 |
| Break-through voltage: | 416 V |
| Voltage for Gain 100 (T=+25°C): | 388.3 V |
| Dark current: | 6.1 nA |
| Screening Logistics: | |
| Available: | Yes |
| Storage Box: | 395 |
| Position in Box: | 15 |
| EP1 batch: | none |
| EP1 batch after irradiation: | none |
| Shipment: | |
| Grid number: | none |
| Position in grid: | none |
| Arrival for irradiation: | none |
| Sent for analysis after irradiation: | none |
| Return for assembly: | none |
| Irradiation: | |
| Date: | none |
| Dose used: | none |
| Temperature: | none |
| Position: | none |
| Bias voltage: | none |
| Annealing: | |
| Date: | none |
| Temperature: | none |
| Duration: | none |
| Measurement results: | |
| Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
| Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
| Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
| Break-through voltage: | T = +20 °C: none T = -25 °C: none |
| Notes: |
Version history
| Time | Author | Change comment |
|---|---|---|
| 16. Apr 2021 22:06:10 CEST | jreher | Updated APD characteristics via API. |
| 05. Feb 2021 11:38:05 CET | jreher | Updated box and position via API. |
| 09. Oct 2020 09:48:22 CEST | jreher | Updated APD location via API. |
| 23. Jun 2016 11:42:19 CEST | Tobias | Imported from Hamamatsu datasheet. |