Show Hamamatsu Avalanche Photo Diode 1704018684 - Archived data from Thu, 23. June 2016 11:42:17 CEST
This is all the information about APD 1704018684. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 1704018684 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | unknown |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | C06 |
Break-through voltage: | 421 V |
Voltage for Gain 100 (T=+25°C): | 391.8 V |
Dark current: | 6.6 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | 401 |
Position in Box: | 42 |
EP1 batch: | none |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | none |
Position in grid: | none |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | none |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
16. Apr 2021 22:07:10 CEST | jreher | Updated APD characteristics via API. |
05. Feb 2021 11:38:53 CET | jreher | Updated box and position via API. |
09. Oct 2020 09:49:53 CEST | jreher | Updated APD location via API. |
23. Jun 2016 11:42:17 CEST | Tobias | Imported from Hamamatsu datasheet. |