Show Hamamatsu Avalanche Photo Diode 1704018669
This is all the information about APD 1704018669. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1704018669 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1704018669/1707018926 |
| Unit: |
#3875 (barcode 1309038480) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C14 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
392.3 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
305 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10376 |
| |
|
| Shipment: |
|
| Grid number: |
499 |
| Position in grid: |
8 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
392.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.0453543 V T = -25 °C: 356.218193 V |
| Voltage for Gain 150: |
T = +20 °C: 399.9856879 V T = -25 °C: 363.8524325 V |
| Voltage for Gain 200: |
T = +20 °C: 404.3996929 V T = -25 °C: 368.1063761 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.553743339 V-1 T = -25 °C: 4.67516709 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.905455983 V-1 T = -25 °C: 9.375694721 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.75737543 V-1 T = -25 °C: 14.67864138 V-1 |
| Break-through voltage: |
T = +20 °C: 412.0803176 V T = -25 °C: 383.1355061 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
